cie

17-25-046

phototransistor

photoelectric detector that uses semiconductors in which the photoelectric effect is produced in the neighbourhood of a double p-n junction (p-n-p or n-p-n) which possesses amplification properties

Note 1 to entry: This entry was numbered 845-05-41 in IEC 60050-845:1987.

Note 2 to entry: This entry was numbered 17-946 in CIE S 017:2011.

Publication date: 2020-12
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